Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1
- RS Stock No.:
- 220-7373
- Mfr. Part No.:
- IPB015N04NGATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,272.00
(exc. VAT)
£1,526.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
1000 + | £1.272 | £1,272.00 |
*price indicative
- RS Stock No.:
- 220-7373
- Mfr. Part No.:
- IPB015N04NGATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 12 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | D2PAK (TO-263) | |
Series | OptiMOS™ 3 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.0015 O | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type D2PAK (TO-263) | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0015 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Ideal for fast switching applications
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
Very low on-resistance R DS(on)
Ideal for fast switching applications
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
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