Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 180 A, 80 V, 3-Pin D2PAK IPB019N08N3GATMA1

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£3.30

(exc. VAT)

£3.96

(inc. VAT)

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Packaging Options:
RS Stock No.:
220-7376
Mfr. Part No.:
IPB019N08N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

80 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0019 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

The Infineon OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Optimized technology for DC-DC converters
Excellent gate charge x R DS(ON) product (FOM)
Superior thermal resistance
Dual sided cooling
Low parasitic inductance
Low profile (<0,7mm)
N-channel, normal level

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