Infineon OptiMOS™ 3 N-Channel MOSFET, 80 A, 80 V, 3-Pin D2PAK IPB054N08N3GATMA1

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£15.70

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Packaging Options:
RS Stock No.:
826-9178
Mfr. Part No.:
IPB054N08N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

80 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Typical Gate Charge @ Vgs

52 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

10.31mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

RoHS Status: Not Applicable

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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