Infineon OptiMOS™ 3 N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 IPP057N08N3GXKSA1
- RS Stock No.:
- 826-9471
- Mfr. Part No.:
- IPP057N08N3GXKSA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£17.50
(exc. VAT)
£21.00
(inc. VAT)
FREE delivery for orders over £50.00
- 430 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
10 - 90 | £1.75 | £17.50 |
100 - 240 | £1.012 | £10.12 |
250 - 340 | £0.985 | £9.85 |
350 - 490 | £0.959 | £9.59 |
500 + | £0.935 | £9.35 |
*price indicative
- RS Stock No.:
- 826-9471
- Mfr. Part No.:
- IPP057N08N3GXKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 80 V | |
Series | OptiMOS™ 3 | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 5.4 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 150 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.36mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 52 nC @ 10 V | |
Width | 4.57mm | |
Transistor Material | Si | |
Height | 15.95mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 80 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 52 nC @ 10 V | ||
Width 4.57mm | ||
Transistor Material Si | ||
Height 15.95mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
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