Infineon OptiMOS™ 3 N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 IPP057N08N3GXKSA1
- RS Stock No.:
- 145-8658
- Mfr. Part No.:
- IPP057N08N3GXKSA1
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£48.05
(exc. VAT)
£57.65
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 400 unit(s) shipping from 08 September 2025
- Plus 999,999,550 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £0.961 | £48.05 |
*price indicative
- RS Stock No.:
- 145-8658
- Mfr. Part No.:
- IPP057N08N3GXKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | TO-220 | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 52 nC @ 10 V | |
| Length | 10.36mm | |
| Transistor Material | Si | |
| Width | 4.57mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type TO-220 | ||
Series OptiMOS™ 3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 52 nC @ 10 V | ||
Length 10.36mm | ||
Transistor Material Si | ||
Width 4.57mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
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