Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220 IPP052N06L3GXKSA1
- RS Stock No.:
- 145-9265
- Mfr. Part No.:
- IPP052N06L3GXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£46.50
(exc. VAT)
£56.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,400 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.93 | £46.50 |
| 100 - 200 | £0.753 | £37.65 |
| 250 - 450 | £0.698 | £34.90 |
| 500 - 950 | £0.66 | £33.00 |
| 1000 + | £0.605 | £30.25 |
*price indicative
- RS Stock No.:
- 145-9265
- Mfr. Part No.:
- IPP052N06L3GXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 115W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.95mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Width | 4.57 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 115W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Height 15.95mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Width 4.57 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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