Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 80 A, 100 V, 3-Pin D2PAK IPB065N10N3GATMA1
- RS Stock No.:
- 220-7381
- Mfr. Part No.:
- IPB065N10N3GATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,277.00
(exc. VAT)
£1,532.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 08 October 2026
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Units | Per unit | Per Reel* |
---|---|---|
1000 + | £1.277 | £1,277.00 |
*price indicative
- RS Stock No.:
- 220-7381
- Mfr. Part No.:
- IPB065N10N3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 100 V | |
Series | OptiMOS™ 3 | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.0065 O | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ 3 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0065 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and figure of merit.
Excellent switching performance
Worlds lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Worlds lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
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