Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 80 A, 100 V, 3-Pin D2PAK IPB065N10N3GATMA1

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Subtotal (1 reel of 1000 units)*

£1,277.00

(exc. VAT)

£1,532.00

(inc. VAT)

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Per unit
Per Reel*
1000 +£1.277£1,277.00

*price indicative

RS Stock No.:
220-7381
Mfr. Part No.:
IPB065N10N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0065 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and figure of merit.

Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products

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