Infineon OptiMOS™ 3 N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK IPB083N10N3GATMA1
- RS Stock No.:
- 165-8268
- Mfr. Part No.:
- IPB083N10N3GATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£627.00
(exc. VAT)
£752.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 12 February 2026
Units | Per unit | Per Reel* |
---|---|---|
1000 + | £0.627 | £627.00 |
*price indicative
- RS Stock No.:
- 165-8268
- Mfr. Part No.:
- IPB083N10N3GATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | D2PAK (TO-263) | |
Series | OptiMOS™ 3 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 15.1 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 125 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 9.45mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 42 nC @ 10 V | |
Length | 10.31mm | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Height | 4.57mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 9.45mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 42 nC @ 10 V | ||
Length 10.31mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 4.57mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Infineon OptiMOS™3 Power MOSFETs, 100V and over
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