Infineon OptiMOS™ 3 N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK IPB083N10N3GATMA1

Subtotal (1 reel of 1000 units)*

£627.00

(exc. VAT)

£752.00

(inc. VAT)

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Per Reel*
1000 +£0.627£627.00

*price indicative

RS Stock No.:
165-8268
Mfr. Part No.:
IPB083N10N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

15.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Transistor Material

Si

Typical Gate Charge @ Vgs

42 nC @ 10 V

Length

10.31mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

RoHS Status: Not Applicable

COO (Country of Origin):
CN

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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