Infineon OptiMOS™ 3 N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK IPB083N10N3GATMA1

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£10.40

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£12.48

(inc. VAT)

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Packaging Options:
RS Stock No.:
897-7361
Mfr. Part No.:
IPB083N10N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

15.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Typical Gate Charge @ Vgs

42 nC @ 10 V

Length

10.31mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

4.57mm

RoHS Status: Not Applicable

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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