Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-252 IPD082N10N3GATMA1

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£7.90

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£9.50

(inc. VAT)

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  • Plus 30 unit(s) shipping from 01 June 2026
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Per unit
Per Pack*
10 - 40£0.79£7.90
50 - 90£0.751£7.51
100 - 240£0.719£7.19
250 - 490£0.687£6.87
500 +£0.64£6.40

*price indicative

Packaging Options:
RS Stock No.:
214-9029
Mfr. Part No.:
IPD082N10N3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 3

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

42nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

175°C

Height

2.41mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). Ideal for high-frequency switching and synchronous rectification. Potential Applications includes Class D audio amplifiers, Isolated DC-DC converters etc.

It has 175 °C operating temperature

Qualified according to JEDEC for target applications

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