Infineon OptiMOS™ 3 N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK IPD082N10N3GATMA1

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£8.76

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£10.51

(inc. VAT)

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10 - 40£0.876£8.76
50 - 90£0.832£8.32
100 - 240£0.797£7.97
250 - 490£0.762£7.62
500 +£0.71£7.10

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Packaging Options:
RS Stock No.:
214-9029
Mfr. Part No.:
IPD082N10N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Package Type

TO-252

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0082 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). Ideal for high-frequency switching and synchronous rectification. Potential Applications includes Class D audio amplifiers, Isolated DC-DC converters etc.

It has 175 °C operating temperature
Qualified according to JEDEC for target applications

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