N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK Infineon IPD082N10N3GATMA1
- RS Stock No.:
- 214-9029
- Mfr. Part No.:
- IPD082N10N3GATMA1
- Brand:
- Infineon
30 In stock - FREE next working day delivery available
10 available from Europe for delivery within 2 working day(s).
Price Each (In a Pack of 10)
£1.18
(exc. VAT)
£1.42
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.18 | £11.80 |
| 50 - 90 | £1.121 | £11.21 |
| 100 - 240 | £1.074 | £10.74 |
| 250 - 490 | £1.027 | £10.27 |
| 500 + | £0.956 | £9.56 |
*price indicative
- RS Stock No.:
- 214-9029
- Mfr. Part No.:
- IPD082N10N3GATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). Ideal for high-frequency switching and synchronous rectification. Potential Applications includes Class D audio amplifiers, Isolated DC-DC converters etc.
It has 175 °C operating temperature
Qualified according to JEDEC for target applications
Qualified according to JEDEC for target applications
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-252 |
| Series | OptiMOS™ 3 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.0082 O |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
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