Infineon OptiMOS™ 3 Dual N-Channel MOSFET Transistor & Diode, 82 A, 80 V, 8-Pin SuperSO8 5 x 6 BSC061N08NS5ATMA1

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£12.90

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£15.50

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50 - 90£1.226£12.26
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Packaging Options:
RS Stock No.:
220-7355
Mfr. Part No.:
BSC061N08NS5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

82 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ 3

Package Type

SuperSO8 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0061 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Number of Elements per Chip

2

The Infineon Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Optimized for high performance SMPS ,e.g. sync.rec.
100%avalanchetested
Superior thermal resistance
N-channel
QualifiedaccordingtoJEDEC1)for target applications
Pb-free lead plating

RoHS compliant
Halogen-freeaccordingtoIEC61249-2-21

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