Infineon OptiMOS™ 5 Dual N-Channel MOSFET Transistor & Diode, 205 A, 40 V, 8-Pin TDSON BSC014N04LSTATMA1

Subtotal (1 reel of 5000 units)*

£2,665.00

(exc. VAT)

£3,200.00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +£0.533£2,665.00

*price indicative

RS Stock No.:
220-7349
Mfr. Part No.:
BSC014N04LSTATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

205 A

Maximum Drain Source Voltage

40 V

Package Type

TDSON

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0014 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

2

The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.

Low RDS(on)
Optimized for synchronous rectification
Enhanced 175°C capability in SuperSO8
Longer life time
Highest efficiency and power density
Highest system reliability
Thermal robustness

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