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Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 205 A, 40 V Enhancement, 8-Pin TDSON BSC014N04LSTATMA1

RS Stock No.:: 220-7350
Mfr. Part No.:: BSC014N04LSTATMA1
Brand:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 205 A, 40 V Enhancement, 8-Pin TDSON BSC014N04LSTATMA1

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Subtotal (1 pack of 5 units)*

£8.05

(exc. VAT)

£9.65

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

4,455 unit(s) ready to ship

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Units	Per unit	Per Pack*
5 - 45	£1.61	£8.05
50 - 120	£1.334	£6.67
125 - 245	£1.258	£6.29
250 - 495	£1.16	£5.80
500 +	£1.078	£5.39

*price indicative

RS Stock No.:: 220-7350
Mfr. Part No.:: BSC014N04LSTATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	205A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS 5
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	115W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	61nC
	Maximum Operating Temperature	175°C
	Width	6.1 mm
	Length	5.35mm
	Height	1.2mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 205A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS 5
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 115W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 61nC
	Maximum Operating Temperature 175°C
	Width 6.1 mm
	Length 5.35mm
	Height 1.2mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSC014N04LSTATMA1

The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.

Low RDS(on)

Optimized for synchronous rectification

Enhanced 175°C capability in SuperSO8

Longer life time

Highest efficiency and power density

Highest system reliability

Thermal robustness