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Infineon OptiMOS Type N-Channel MOSFET & Diode, 137 A, 60 V Enhancement, 8-Pin TDSON BSC028N06NSTATMA1

RS Stock No.:: 220-7352
Mfr. Part No.:: BSC028N06NSTATMA1
Brand:: Infineon

Infineon OptiMOS Type N-Channel MOSFET & Diode, 137 A, 60 V Enhancement, 8-Pin TDSON BSC028N06NSTATMA1

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Subtotal (1 pack of 5 units)*

£10.20

(exc. VAT)

£12.25

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,925 unit(s) ready to ship

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Units	Per unit	Per Pack*
5 - 45	£2.04	£10.20
50 - 120	£1.774	£8.87
125 - 245	£1.652	£8.26
250 - 495	£1.55	£7.75
500 +	£1.428	£7.14

*price indicative

RS Stock No.:: 220-7352
Mfr. Part No.:: BSC028N06NSTATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	137A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	37nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	83W
	Maximum Operating Temperature	150°C
	Length	5.35mm
	Standards/Approvals	No
	Width	6.1 mm
	Height	1.2mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 137A
	Maximum Drain Source Voltage Vds 60V
	Package Type TDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 37nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 83W
	Maximum Operating Temperature 150°C
	Length 5.35mm
	Standards/Approvals No
	Width 6.1 mm
	Height 1.2mm
	Automotive Standard No

Datasheet - BSC028N06NSTATMA1

The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.

Low RDS(on)

Optimized for synchronous rectification

Enhanced 175°C capability in SuperSO8

Longer life time

Highest efficiency and power density

Highest system reliability

Thermal robustness