Infineon OptiMOS™ Dual N-Channel MOSFET Transistor & Diode, 137 A, 60 V, 8-Pin SuperSO8 5 x 6 BSC028N06NSTATMA1

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Subtotal (1 pack of 5 units)*

£11.40

(exc. VAT)

£13.70

(inc. VAT)

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Per Pack*
5 - 45£2.28£11.40
50 - 120£1.984£9.92
125 - 245£1.846£9.23
250 - 495£1.732£8.66
500 +£1.596£7.98

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Packaging Options:
RS Stock No.:
220-7352
Mfr. Part No.:
BSC028N06NSTATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

137 A

Maximum Drain Source Voltage

60 V

Package Type

SuperSO8 5 x 6

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0028 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Number of Elements per Chip

2

The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.

Low RDS(on)
Optimized for synchronous rectification
Enhanced 175°C capability in SuperSO8
Longer life time
Highest efficiency and power density
Highest system reliability
Thermal robustness

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