Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK SIHF640L-GE3

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Subtotal (1 pack of 10 units)*

£16.44

(exc. VAT)

£19.73

(inc. VAT)

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Temporarily out of stock
  • 999,999,990 unit(s) shipping from 12 January 2026
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Units
Per unit
Per Pack*
10 - 40£1.644£16.44
50 - 90£1.545£15.45
100 - 240£1.397£13.97
250 - 490£1.316£13.16
500 +£1.233£12.33

*price indicative

Packaging Options:
RS Stock No.:
815-2635
Mfr. Part No.:
SIHF640L-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

70 nC @ 10 V

Length

10.67mm

Number of Elements per Chip

1

Width

4.83mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

11.3mm

Minimum Operating Temperature

-55 °C

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