Infineon HEXFET N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-247AC IRFP4227PBF

RS Stock No.:: 913-3972
Mfr. Part No.:: IRFP4227PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-247AC IRFP4227PBF

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Subtotal (1 tube of 25 units)*

£58.00

(exc. VAT)

£69.50

(inc. VAT)

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In Stock

950 unit(s) ready to ship

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Units	Per unit	Per Tube*
25 - 25	£2.32	£58.00
50 - 100	£2.204	£55.10
125 - 225	£2.111	£52.78
250 - 475	£2.018	£50.45
500 +	£1.879	£46.98

*price indicative

RS Stock No.:: 913-3972
Mfr. Part No.:: IRFP4227PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	65 A
	Maximum Drain Source Voltage	200 V
	Series	HEXFET
	Package Type	TO-247AC
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	25 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	330 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Width	5.3mm
	Typical Gate Charge @ Vgs	70 nC @ 10 V
	Length	15.9mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Height	20.3mm
	Minimum Operating Temperature	-40 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 65 A
	Maximum Drain Source Voltage 200 V
	Series HEXFET
	Package Type TO-247AC
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 25 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 330 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Width 5.3mm
	Typical Gate Charge @ Vgs 70 nC @ 10 V
	Length 15.9mm
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Height 20.3mm
	Minimum Operating Temperature -40 °C

COO (Country of Origin):: MX

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Infineon HEXFET Series MOSFET, 65A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRFP4227PBF

This MOSFET functions as a vital component in contemporary electronic applications, offering dependable control and switching for high-power systems. It delivers robust performance and efficiency, making it suitable for a variety of industrial tasks, particularly in settings where high thermal resistance and low conduction losses are essential. The enhancement mode design facilitates optimal operation under diverse conditions, thereby making it ideal for automation, electrical systems, and mechanical applications.

Features & Benefits

• Provides 65A continuous drain current for intensive applications
• Operates efficiently at a maximum drain-source voltage of 200V
• Low RDS(on) contributes to energy efficiency during use
• Rated for high temperature tolerance up to 175°C
• Optimised for fast switching with minimal fall and rise times
• Offers excellent repetitive avalanche capability for enhanced system reliability

Applications

• Utilised in energy recovery systems to enhance efficiency
• Compatible with PDP sustain for effective performance
• Suitable for high-power motor drive circuits requiring accurate control
• Employed in switching power supplies within automation processes
• Used in professional audio amplifiers for effective output handling

What is the maximum current that can be handled at elevated temperatures?

It can manage a continuous drain current of 46A at 100°C, ensuring functionality in tough environments.

How does this component perform under pulsed conditions?

The pulsed drain current can reach up to 130A, making it appropriate for transient applications.

What are the cooling requirements when using this device?

It has a thermal resistance of 0.45°C/W from junction to case, requiring effective heat dissipation mechanisms for optimal operation.

What type of mounting is required for installation?

Installation necessitates through-hole mounting, suitable for robust applications needing solid connections.

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