Infineon HEXFET N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250MPBF

RS Stock No.:: 124-8762
Mfr. Part No.:: IRFP250MPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250MPBF

Bulk discount available

Subtotal (1 tube of 25 units)*

£39.25

(exc. VAT)

£47.00

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Tube*
25 - 25	£1.57	£39.25
50 - 100	£1.256	£31.40
125 - 225	£1.178	£29.45
250 - 600	£1.084	£27.10
625 +	£1.005	£25.13

*price indicative

RS Stock No.:: 124-8762
Mfr. Part No.:: IRFP250MPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	30 A
	Maximum Drain Source Voltage	200 V
	Package Type	TO-247AC
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	75 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	214 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Length	16.13mm
	Typical Gate Charge @ Vgs	123 nC @ 10 V
	Width	5.2mm
	Height	21.1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 30 A
	Maximum Drain Source Voltage 200 V
	Package Type TO-247AC
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 75 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 214 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Length 16.13mm
	Typical Gate Charge @ Vgs 123 nC @ 10 V
	Width 5.2mm
	Height 21.1mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: CN

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250MPBF

This N-channel MOSFET is designed for high performance and efficiency across a variety of applications. It offers a maximum continuous drain current of 30A and a drain-source voltage rating of 200V, making it suitable for tasks in the automation and electronics sectors. Its design ensures effective thermal performance, which enhances its use in electrical and mechanical industries.

Features & Benefits

• Dynamic dv/dt rating ensures stability during operation
• Enhanced thermal capabilities, with an operating temperature of up to 175°C
• Low on-resistance reduces power losses
• Fully avalanche-rated, providing over-voltage protection
• Simple drive requirements for easier integration into designs

Applications

• Suitable for high-frequency switching
• Ideal for power supplies and converters
• Applicable in motor control systems and industrial drives
• Utilised in renewable energy systems, such as solar inverters

How is thermal performance managed in demanding environments?

The thermal resistance characteristics are designed for efficient heat dissipation, allowing operation from -55°C to +175°C.

What are the implications of the low Rds(on)?

The low on-resistance results in lower power dissipation during conduction, enhancing overall system efficiency and reducing thermal stress on components.

Can this device be used for parallel configurations?

Yes, the design facilitates paralleling, increasing current capacity and improving thermal performance in high-power applications.

What should be considered when selecting the gate drive voltage?

A gate drive voltage between 2V and 4V is optimal for ensuring sufficient switching performance and preventing undesired operation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.