Infineon HEXFET N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250MPBF
- RS Stock No.:
- 124-8762
- Mfr. Part No.:
- IRFP250MPBF
- Brand:
- Infineon
Subtotal (1 tube of 25 units)*
£39.25
(exc. VAT)
£47.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 10 October 2025
Units | Per unit | Per Tube* |
---|---|---|
25 - 25 | £1.57 | £39.25 |
50 - 100 | £1.256 | £31.40 |
125 - 225 | £1.178 | £29.45 |
250 - 600 | £1.084 | £27.10 |
625 + | £1.005 | £25.13 |
*price indicative
- RS Stock No.:
- 124-8762
- Mfr. Part No.:
- IRFP250MPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 200 V | |
Series | HEXFET | |
Package Type | TO-247AC | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 75 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 214 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 123 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Length | 16.13mm | |
Width | 5.2mm | |
Transistor Material | Si | |
Height | 21.1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 200 V | ||
Series HEXFET | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 75 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 214 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 123 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 16.13mm | ||
Width 5.2mm | ||
Transistor Material Si | ||
Height 21.1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250MPBF
Features & Benefits
• Enhanced thermal capabilities, with an operating temperature of up to 175°C
• Low on-resistance reduces power losses
• Fully avalanche-rated, providing over-voltage protection
• Simple drive requirements for easier integration into designs
Applications
• Ideal for power supplies and converters
• Applicable in motor control systems and industrial drives
• Utilised in renewable energy systems, such as solar inverters
How is thermal performance managed in demanding environments?
What are the implications of the low Rds(on)?
Can this device be used for parallel configurations?
What should be considered when selecting the gate drive voltage?
Related links
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