MPN

Infineon HEXFET N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250NPBF

RS Stock No.:: 541-0042
Mfr. Part No.:: IRFP250NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250NPBF

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Subtotal (1 unit)*

£1.76

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£2.11

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In Stock

42 unit(s) ready to ship
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Plus 5,285 unit(s) shipping from 11 September 2025

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Units	Per unit
1 - 9	£1.76
10 - 24	£1.67
25 - 49	£1.60
50 - 99	£1.53
100 +	£1.41

*price indicative

RS Stock No.:: 541-0042
Mfr. Part No.:: IRFP250NPBF
Brand:: Infineon

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250NPBF

This power MOSFET is engineered for high performance across various electronic applications. As an N-channel MOSFET, it efficiently enhances current flow when voltage is applied. It is notable for its capacity to manage high current levels while maintaining low on-resistance, which makes it suitable for power-intensive applications.

Features & Benefits

• Continuous drain current rating of 30A supports robust performance
• Power dissipation capacity of 214W accommodates heavy-duty applications
• Maximum drain-source voltage of 200V contributes to device reliability
• Low Rds(on) of 75 mΩ minimises energy loss during operation
• Enhancement mode improves control and efficiency in circuit applications
• Compatible with TO-247AC package for seamless integration into existing systems

Applications

• Power supplies for industrial automation
• Driving high-current loads in electronic circuits
• Converters and inverters in renewable energy systems
• Motor control requiring fast switching

How does this MOSFET handle high temperatures?

With a maximum operating temperature of +175°C, it functions effectively in high-thermal environments, ensuring consistent performance under stress.

What are the implications of the specified on-resistance?

A low Rds(on) of 75 mΩ results in reduced power losses, enhancing overall efficiency and decreasing heat generation during use.

Is this device suitable for pulsed applications?

Yes, it can handle pulsed drain currents up to 120A, making it appropriate for short-duration, high-current applications.

How does it manage gate voltage during operation?

The device accommodates a range of gate-to-source voltages from -20 V to +20 V, providing flexibility in various control circuits.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	30 A
	Maximum Drain Source Voltage	200 V
	Package Type	TO-247AC
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	75 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	214 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	123 nC @ 10 V
	Width	5.3mm
	Transistor Material	Si
	Length	15.9mm
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Forward Diode Voltage	1.3V
	Minimum Operating Temperature	-55 °C
	Height	20.3mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 30 A
	Maximum Drain Source Voltage 200 V
	Package Type TO-247AC
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 75 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 214 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 123 nC @ 10 V
	Width 5.3mm
	Transistor Material Si
	Length 15.9mm
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Forward Diode Voltage 1.3V
	Minimum Operating Temperature -55 °C
	Height 20.3mm

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