Infineon HEXFET N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260NPBF

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£75.45

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£90.55

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25 - 25£3.018£75.45
50 - 100£2.867£71.68
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RS Stock No.:
919-5019
Mfr. Part No.:
IRFP260NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247AC

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

234 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

15.9mm

Width

5.3mm

Minimum Operating Temperature

-55 °C

Height

20.3mm

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 50A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFP260NPBF


This MOSFET is intended for high-power applications, delivering efficiency and reliability across various electronic systems. With its enhancement mode design and robust current handling capabilities, it plays a crucial role in optimising circuit performance while effectively managing thermal dissipation.

Features & Benefits


• Supports continuous drain currents up to 50A for strong performance
• Operates efficiently with a maximum drain-source voltage of 200V
• Enhancement mode design offers improved control and versatility
• Low Rds(on) of 40mΩ reduces energy losses
• Designed for through-hole mounting, facilitating easy installation

Applications


• Utilised in power supply circuits for managing high currents
• Suitable for automotive requiring durable electronic components
• Applied in industrial equipment for effective power control
• Commonly found in renewable energy systems to enhance efficiency

What is the maximum power dissipation for this component?


The power dissipation can reach up to 300W, ensuring efficient performance in high-load conditions.

How does the low Rds(on) benefit circuit efficiency?


The low Rds(on) of 40mΩ significantly reduces conduction losses, enhancing overall efficiency and minimising heat generation during operation.

What are the advantages of using this MOSFET in power applications?


This MOSFET provides high continuous drain current and operates effectively across a wide temperature range, making it suitable for power applications.

Is it easy to install with other components in a circuit?


The through-hole mounting type simplifies integration into various circuit designs, allowing for straightforward assembly with existing components.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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