Infineon HEXFET N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260NPBF
- RS Stock No.:
- 542-9771
- Mfr. Part No.:
- IRFP260NPBF
- Brand:
- Infineon
Subtotal (1 unit)*
£3.81
(exc. VAT)
£4.57
(inc. VAT)
FREE delivery for orders over £50.00
- 104 unit(s) ready to ship
- Plus 8 unit(s) ready to ship from another location
- Plus 7 unit(s) shipping from 08 October 2025
Units | Per unit |
---|---|
1 - 9 | £3.81 |
10 - 24 | £3.62 |
25 - 49 | £3.47 |
50 - 99 | £3.31 |
100 + | £3.09 |
*price indicative
- RS Stock No.:
- 542-9771
- Mfr. Part No.:
- IRFP260NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 50 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TO-247AC | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 40 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 300 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 15.9mm | |
Width | 5.3mm | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 234 nC @ 10 V | |
Height | 20.3mm | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 15.9mm | ||
Width 5.3mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 234 nC @ 10 V | ||
Height 20.3mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
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