Infineon HEXFET N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260NPBF
- RS Stock No.:
- 542-9771
- Mfr. Part No.:
- IRFP260NPBF
- Brand:
- Infineon
Subtotal (1 unit)*
£3.81
(exc. VAT)
£4.57
(inc. VAT)
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- 78 unit(s) ready to ship
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- Plus 7 unit(s) shipping from 30 October 2025
Units | Per unit |
---|---|
1 - 9 | £3.81 |
10 - 24 | £3.62 |
25 - 49 | £3.47 |
50 - 99 | £3.31 |
100 + | £3.09 |
*price indicative
- RS Stock No.:
- 542-9771
- Mfr. Part No.:
- IRFP260NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 50 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TO-247AC | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 40 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 300 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 234 nC @ 10 V | |
Width | 5.3mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 15.9mm | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Height | 20.3mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 234 nC @ 10 V | ||
Width 5.3mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 15.9mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Height 20.3mm | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon HEXFET Series MOSFET, 50A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFP260NPBF
Features & Benefits
• Operates efficiently with a maximum drain-source voltage of 200V
• Enhancement mode design offers improved control and versatility
• Low Rds(on) of 40mΩ reduces energy losses
• Designed for through-hole mounting, facilitating easy installation
Applications
• Suitable for automotive requiring durable electronic components
• Applied in industrial equipment for effective power control
• Commonly found in renewable energy systems to enhance efficiency
What is the maximum power dissipation for this component?
How does the low Rds(on) benefit circuit efficiency?
What are the advantages of using this MOSFET in power applications?
Is it easy to install with other components in a circuit?
Related links
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