Infineon HEXFET N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250NPBF
- RS Stock No.:
- 919-4810
- Mfr. Part No.:
- IRFP250NPBF
- Brand:
- Infineon
Subtotal (1 tube of 25 units)*
£38.75
(exc. VAT)
£46.50
(inc. VAT)
FREE delivery for orders over £50.00
- 25 unit(s) ready to ship
- Plus 5,075 unit(s) shipping from 09 October 2025
Units | Per unit | Per Tube* |
---|---|---|
25 - 25 | £1.55 | £38.75 |
50 - 100 | £1.472 | £36.80 |
125 - 225 | £1.41 | £35.25 |
250 - 600 | £1.348 | £33.70 |
625 + | £1.256 | £31.40 |
*price indicative
- RS Stock No.:
- 919-4810
- Mfr. Part No.:
- IRFP250NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TO-247AC | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 75 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 214 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Length | 15.9mm | |
Typical Gate Charge @ Vgs | 123 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 5.3mm | |
Height | 20.3mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 75 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 214 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 15.9mm | ||
Typical Gate Charge @ Vgs 123 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 5.3mm | ||
Height 20.3mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250NPBF
Features & Benefits
• Power dissipation capacity of 214W accommodates heavy-duty applications
• Maximum drain-source voltage of 200V contributes to device reliability
• Low Rds(on) of 75 mΩ minimises energy loss during operation
• Enhancement mode improves control and efficiency in circuit applications
• Compatible with TO-247AC package for seamless integration into existing systems
Applications
• Driving high-current loads in electronic circuits
• Converters and inverters in renewable energy systems
• Motor control requiring fast switching
How does this MOSFET handle high temperatures?
What are the implications of the specified on-resistance?
Is this device suitable for pulsed applications?
How does it manage gate voltage during operation?
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