Infineon HEXFET N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-247AC IRFP4227PBF
- RS Stock No.:
- 650-4772
- Mfr. Part No.:
- IRFP4227PBF
- Brand:
- Infineon
Subtotal (1 unit)*
£3.32
(exc. VAT)
£3.98
(inc. VAT)
FREE delivery for orders over £50.00
- 40 unit(s) ready to ship
- Plus 7 unit(s) ready to ship from another location
- Plus 952 unit(s) shipping from 08 October 2025
Units | Per unit |
---|---|
1 - 9 | £3.32 |
10 - 24 | £3.15 |
25 - 49 | £3.02 |
50 - 99 | £2.89 |
100 + | £2.69 |
*price indicative
- RS Stock No.:
- 650-4772
- Mfr. Part No.:
- IRFP4227PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 65 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TO-247AC | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 25 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 330 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Width | 5.3mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Length | 15.9mm | |
Typical Gate Charge @ Vgs | 70 nC @ 10 V | |
Forward Diode Voltage | 1.3V | |
Height | 20.3mm | |
Minimum Operating Temperature | -40 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 65 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 25 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5.3mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 15.9mm | ||
Typical Gate Charge @ Vgs 70 nC @ 10 V | ||
Forward Diode Voltage 1.3V | ||
Height 20.3mm | ||
Minimum Operating Temperature -40 °C | ||
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