Infineon HEXFET Silicon N-Channel MOSFET, 56 A, 55 V, 3-Pin DPAK IRFR2405TRPBF

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Subtotal (1 pack of 15 units)*

£13.335

(exc. VAT)

£16.005

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 60£0.889£13.34
75 - 135£0.845£12.68
150 - 360£0.809£12.14
375 - 735£0.774£11.61
750 +£0.721£10.82

*price indicative

Packaging Options:
RS Stock No.:
222-4751
Mfr. Part No.:
IRFR2405TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

160000 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated

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