MPN

Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V TO-252 IRFR3710ZTRPBF

RS Stock No.:: 257-5855
Mfr. Part No.:: IRFR3710ZTRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V TO-252 IRFR3710ZTRPBF

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Subtotal (1 pack of 5 units)*

£8.85

(exc. VAT)

£10.60

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,425 unit(s) ready to ship

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Units	Per unit	Per Pack*
5 - 20	£1.77	£8.85
25 - 45	£1.594	£7.97
50 - 120	£1.486	£7.43
125 - 245	£1.38	£6.90
250 +	£0.708	£3.54

*price indicative

RS Stock No.:: 257-5855
Mfr. Part No.:: IRFR3710ZTRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	56A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	18mΩ
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	140W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	69nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Width	2.39 mm
	Length	6.73mm
	Height	10.41mm
	Automotive Standard	No
	Distrelec Product Id	304-40-539

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 56A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Maximum Drain Source Resistance Rds 18mΩ
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 140W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 69nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Width 2.39 mm
	Length 6.73mm
	Height 10.41mm
	Automotive Standard No
	Distrelec Product Id 304-40-539

Datasheet - IRFR3710ZTRPBF

The Infineon HEXFET power MOSFET is utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced process technology

Ultra low on-resistance

175°C operating temperature

Fast switching

Repetitive avalanche allowed up to Tjmax

Multiple package options

Lead-free