onsemi UltraFET N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-220AB HUF75639P3
- RS Stock No.:
- 329-1013
- Mfr. Part No.:
- HUF75639P3
- Brand:
- onsemi
Bulk discount available
Subtotal (1 unit)*
£2.40
(exc. VAT)
£2.88
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 32 unit(s) ready to ship
- Plus 370 unit(s) shipping from 11 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £2.40 |
| 10 + | £2.07 |
*price indicative
- RS Stock No.:
- 329-1013
- Mfr. Part No.:
- HUF75639P3
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 56 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Series | UltraFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 25 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.83mm | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 110 nC @ 20 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.4mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 56 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series UltraFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 25 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 4.83mm | ||
Length 10.67mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 110 nC @ 20 V | ||
Minimum Operating Temperature -55 °C | ||
Height 9.4mm | ||
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