Infineon HEXFET N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK IRFR3710ZTRLPBF

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 15 units)*

£17.055

(exc. VAT)

£20.46

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,220 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
15 - 15£1.137£17.06
30 - 60£1.081£16.22
75 - 135£1.035£15.53
150 - 360£0.989£14.84
375 +£0.921£13.82

*price indicative

Packaging Options:
RS Stock No.:
214-4457
Mfr. Part No.:
IRFR3710ZTRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.018 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

Its design is extremely efficient and reliable

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links