Infineon HEXFET N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK IRFR4510TRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

143 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

54 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

7.49mm

Number of Elements per Chip

1

Transistor Material

Si

Length

6.73mm

Height

2.39mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C