Infineon HEXFET N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IRFR540ZTRPBF

Subtotal (1 reel of 2000 units)*

£594.00

(exc. VAT)

£712.00

(inc. VAT)

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2000 +£0.297£594.00

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RS Stock No.:
215-2598
Mfr. Part No.:
IRFR540ZTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0285 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

This Infineon HEXFET® Power MOSFET utilizes the latest 35A ID processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology
Ultra Low On-Resistance
Lead-Free and Halogen-Free

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