Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252

Bulk discount available

Subtotal (1 reel of 2000 units)*

£1,174.00

(exc. VAT)

£1,408.00

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Reel*
2000 - 2000£0.587£1,174.00
4000 +£0.557£1,114.00

*price indicative

RS Stock No.:
215-2598
Mfr. Part No.:
IRFR540ZTRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

28.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

91W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

59nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon HEXFET® Power MOSFET utilizes the latest 35A ID processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Lead-Free and Halogen-Free

Related links