Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252 AUIRFR540Z

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£15.29

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£18.35

(inc. VAT)

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10 - 40£1.529£15.29
50 - 90£1.453£14.53
100 - 240£1.307£13.07
250 +£1.301£13.01

*price indicative

Packaging Options:
RS Stock No.:
214-8953
Mfr. Part No.:
AUIRFR540Z
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

28.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

91W

Typical Gate Charge Qg @ Vgs

39nC

Maximum Operating Temperature

175°C

Height

2.39mm

Length

6.22mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

Ultra Low On-Resistance

Automotive Qualified

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