Infineon OptiMOS™-T N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1

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£11.205

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£13.44

(inc. VAT)

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15 - 60£0.747£11.21
75 - 135£0.71£10.65
150 - 360£0.68£10.20
375 - 735£0.65£9.75
750 +£0.605£9.08

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Packaging Options:
RS Stock No.:
218-3043
Mfr. Part No.:
IPD35N10S3L26ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™-T

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon OptiMOS™-T series N-channel automotive MOSFET integrated with DPAK (TO-252) type package. It has low switching and conduction power losses.

N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature

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