Infineon HEXFET N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK AUIRFR540Z

Subtotal (1 tube of 75 units)*

£55.575

(exc. VAT)

£66.675

(inc. VAT)

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Per Tube*
75 +£0.741£55.58

*price indicative

RS Stock No.:
214-8951
Mfr. Part No.:
AUIRFR540Z
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0285 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology
Ultra Low On-Resistance
Automotive Qualified

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