onsemi MegaFET N-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220AB RFP50N06
- RS Stock No.:
- 325-7625
- Mfr. Part No.:
- RFP50N06
- Brand:
- onsemi
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£1.15
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In Stock
- 301 unit(s) ready to ship
- Plus 53 unit(s) ready to ship from another location
- Plus 18 unit(s) shipping from 16 December 2025
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Units | Per unit |
|---|---|
| 1 - 9 | £1.15 |
| 10 + | £0.99 |
*price indicative
- RS Stock No.:
- 325-7625
- Mfr. Part No.:
- RFP50N06
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220AB | |
| Series | MegaFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 22 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 131 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.83mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 125 nC @ 20 V | |
| Height | 9.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Series MegaFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 22 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 131 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.83mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 125 nC @ 20 V | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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