onsemi MegaFET N-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220AB RFP50N06
- RS Stock No.:
- 124-1672
- Mfr. Part No.:
- RFP50N06
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£42.20
(exc. VAT)
£50.65
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 05 December 2025
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.844 | £42.20 |
100 - 450 | £0.714 | £35.70 |
500 - 950 | £0.622 | £31.10 |
1000 + | £0.603 | £30.15 |
*price indicative
- RS Stock No.:
- 124-1672
- Mfr. Part No.:
- RFP50N06
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 50 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-220AB | |
Series | MegaFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 22 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 131 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 125 nC @ 20 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Length | 10.67mm | |
Width | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Height | 9.4mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Series MegaFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 22 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 131 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 125 nC @ 20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Width 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.4mm | ||
MegaFET MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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