onsemi MegaFET N-Channel MOSFET, 16 A, 50 V, 3-Pin DPAK RFD16N05LSM9A

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Subtotal (1 reel of 2500 units)*

£840.00

(exc. VAT)

£1,007.50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.336£840.00

*price indicative

RS Stock No.:
166-2656
Mfr. Part No.:
RFD16N05LSM9A
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

50 V

Series

MegaFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

47 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

6.22mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Transistor Material

Si

Height

2.39mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

MegaFET MOSFET, Fairchild Semiconductor


The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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