MPN

Infineon HEXFET Type N-Channel MOSFET, 16 A, 110 V Enhancement, 3-Pin TO-252

RS Stock No.:: 222-4752
Mfr. Part No.:: IRFR3910TRLPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 16 A, 110 V Enhancement, 3-Pin TO-252

Bulk discount available

Subtotal (1 reel of 3000 units)*

£1,092.00

(exc. VAT)

£1,311.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

6,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 - 3000	£0.364	£1,092.00
6000 +	£0.346	£1,038.00

*price indicative

RS Stock No.:: 222-4752
Mfr. Part No.:: IRFR3910TRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	16A
	Maximum Drain Source Voltage Vds	110V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.12mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	79W
	Typical Gate Charge Qg @ Vgs	44nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	2.39 mm
	Length	6.73mm
	Height	6.22mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 16A
	Maximum Drain Source Voltage Vds 110V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.12mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 79W
	Typical Gate Charge Qg @ Vgs 44nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 2.39 mm
	Length 6.73mm
	Height 6.22mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRFR3910TRLPBF

The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated