Infineon HEXFET Silicon N-Channel MOSFET, 16 A, 110 V, 3-Pin DPAK IRFR3910TRLPBF

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£9.96

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£11.96

(inc. VAT)

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  • Plus 6,280 unit(s) shipping from 08 October 2025
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Per Pack*
20 - 80£0.498£9.96
100 - 180£0.413£8.26
200 - 480£0.388£7.76
500 - 980£0.358£7.16
1000 +£0.341£6.82

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Packaging Options:
RS Stock No.:
222-4753
Mfr. Part No.:
IRFR3910TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

110 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.000115 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated

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