N-Channel MOSFET, 16 A, 200 V, 3-Pin DPAK onsemi FDD18N20LZ

RS Stock No.:: 166-3429
Mfr. Part No.:: FDD18N20LZ
Brand:: onsemi

N-Channel MOSFET, 16 A, 200 V, 3-Pin DPAK onsemi FDD18N20LZ

Available to back order for despatch 20/01/2025

Price Each (On a Reel of 2500)

£0.686

(exc. VAT)

£0.823

(inc. VAT)

Units	Per unit	Per Reel*
2500 +	£0.686	£1,715.00

*price indicative

RS Stock No.:: 166-3429
Mfr. Part No.:: FDD18N20LZ
Brand:: onsemi

Technical Reference

Legislation and Compliance

Product Details

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	16 A
Maximum Drain Source Voltage	200 V
Series	UniFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	89 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Length	6.73mm
Width	6.22mm
Typical Gate Charge @ Vgs	30 nC @ 10 V
Maximum Operating Temperature	+150 °C
Height	2.39mm
Minimum Operating Temperature	-55 °C