onsemi UniFET N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK FDB52N20TM
- RS Stock No.:
- 759-8983
- Mfr. Part No.:
- FDB52N20TM
- Brand:
- onsemi
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 759-8983
- Mfr. Part No.:
- FDB52N20TM
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 52 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | UniFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 49 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 357 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Length | 9.98mm | |
| Transistor Material | Si | |
| Width | 10.16mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 49 nC @ 10 V | |
| Height | 4.572mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 52 A | ||
Maximum Drain Source Voltage 200 V | ||
Series UniFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 49 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 357 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Length 9.98mm | ||
Transistor Material Si | ||
Width 10.16mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 49 nC @ 10 V | ||
Height 4.572mm | ||
Minimum Operating Temperature -55 °C | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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