onsemi UniFET N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK FDB52N20TM

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Packaging Options:
RS Stock No.:
759-8983
Mfr. Part No.:
FDB52N20TM
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Series

UniFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

357 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

49 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

9.98mm

Number of Elements per Chip

1

Transistor Material

Si

Width

10.16mm

Minimum Operating Temperature

-55 °C

Height

4.572mm

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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