onsemi UniFET N-Channel MOSFET, 44 A, 250 V, 3-Pin D2PAK FDB44N25TM

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Subtotal (1 reel of 800 units)*

£806.40

(exc. VAT)

£968.00

(inc. VAT)

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Per Reel*
800 +£1.008£806.40

*price indicative

RS Stock No.:
166-1674
Mfr. Part No.:
FDB44N25TM
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

250 V

Series

UniFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

69 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

307 W

Transistor Configuration

Single

Typical Gate Charge @ Vgs

47 nC @ 10 V

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+150 °C

Width

11.33mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.83mm

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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