N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 onsemi FDH44N50

RS Stock No.:: 806-3438
Mfr. Part No.:: FDH44N50
Brand:: onsemi

N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 onsemi FDH44N50

This product is currently unavailable to backorder.

Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

Price Each

£7.40

(exc. VAT)

£8.88

(inc. VAT)

Units	Per unit
1 - 4	£7.40
5 - 9	£6.82
10 - 49	£6.46
50 - 99	£5.96
100 +	£5.36

RS Stock No.:: 806-3438
Mfr. Part No.:: FDH44N50
Brand:: onsemi

Technical Reference

Legislation and Compliance

Product Details

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	44 A
Maximum Drain Source Voltage	500 V
Series	UniFET
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	120 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	750 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	15.87mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	90 nC @ 10 V
Transistor Material	Si
Number of Elements per Chip	1
Width	4.82mm
Height	20.82mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V