onsemi UniFET N-Channel MOSFET, 28 A, 300 V, 3-Pin D2PAK FDB28N30TM
- RS Stock No.:
- 759-8970
- Mfr. Part No.:
- FDB28N30TM
- Brand:
- onsemi
Save 25% when you buy 200 units
Subtotal (1 pack of 2 units)*
£2.54
(exc. VAT)
£3.04
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 990 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.27 | £2.54 |
| 20 - 198 | £1.095 | £2.19 |
| 200 + | £0.95 | £1.90 |
*price indicative
- RS Stock No.:
- 759-8970
- Mfr. Part No.:
- FDB28N30TM
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 28 A | |
| Maximum Drain Source Voltage | 300 V | |
| Package Type | D2PAK (TO-263) | |
| Series | UniFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 129 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 11.33mm | |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 28 A | ||
Maximum Drain Source Voltage 300 V | ||
Package Type D2PAK (TO-263) | ||
Series UniFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 129 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 11.33mm | ||
Typical Gate Charge @ Vgs 39 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.67mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
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