onsemi UniFET N-Channel MOSFET, 33 A, 250 V, 3-Pin D2PAK FDB33N25TM
- RS Stock No.:
- 759-8973
- Mfr. Part No.:
- FDB33N25TM
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£2.83
(exc. VAT)
£3.396
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- Plus 12 left, shipping from 08 September 2025
- Plus 1,554 left, shipping from 15 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.415 | £2.83 |
| 20 - 198 | £1.22 | £2.44 |
| 200 + | £1.06 | £2.12 |
*price indicative
- RS Stock No.:
- 759-8973
- Mfr. Part No.:
- FDB33N25TM
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 33 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | D2PAK (TO-263) | |
| Series | UniFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 94 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 235 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 36.8 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 11.33mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.67mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type D2PAK (TO-263) | ||
Series UniFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 94 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 235 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 36.8 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 11.33mm | ||
Maximum Operating Temperature +150 °C | ||
Length 10.67mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
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