onsemi UniFET N-Channel MOSFET, 33 A, 250 V, 3-Pin TO-220AB FDP33N25
- RS Stock No.:
- 145-4517
- Mfr. Part No.:
- FDP33N25
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£40.60
(exc. VAT)
£48.70
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,000 unit(s) shipping from 23 September 2025
- Plus 999,998,950 unit(s) shipping from 14 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £0.812 | £40.60 |
*price indicative
- RS Stock No.:
- 145-4517
- Mfr. Part No.:
- FDP33N25
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 33 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | TO-220AB | |
| Series | UniFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 94 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 235 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 36.8 nC @ 10 V | |
| Width | 4.83mm | |
| Height | 9.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-220AB | ||
Series UniFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 94 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 235 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 36.8 nC @ 10 V | ||
Width 4.83mm | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
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