onsemi UniFET N-Channel MOSFET, 51 A, 250 V, 3-Pin TO-220AB FDP51N25

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Subtotal (1 tube of 50 units)*

£91.65

(exc. VAT)

£110.00

(inc. VAT)

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Per Tube*
50 - 50£1.833£91.65
100 +£1.723£86.15

*price indicative

RS Stock No.:
145-5354
Mfr. Part No.:
FDP51N25
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

250 V

Series

UniFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

320 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

55 nC @ 10 V

Length

10.67mm

Width

4.83mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

9.4mm

Minimum Operating Temperature

-55 °C

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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