onsemi UniFET N-Channel MOSFET, 6.2 A, 250 V, 3-Pin DPAK FDD7N25LZTM

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£6.30

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£7.60

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10 - 90£0.63£6.30
100 - 240£0.543£5.43
250 - 490£0.471£4.71
500 - 990£0.414£4.14
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Packaging Options:
RS Stock No.:
809-0931
Mfr. Part No.:
FDD7N25LZTM
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

250 V

Package Type

DPAK (TO-252)

Series

UniFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

570 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

6.22mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Length

6.73mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

2.39mm

Minimum Operating Temperature

-55 °C

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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