N-Channel MOSFET, 6.2 A, 250 V, 3-Pin DPAK onsemi FDD7N25LZTM

RS Stock No.:: 166-3420
Mfr. Part No.:: FDD7N25LZTM
Brand:: onsemi

N-Channel MOSFET, 6.2 A, 250 V, 3-Pin DPAK onsemi FDD7N25LZTM

Price Each (On a Reel of 2500)

£0.278

(exc. VAT)

£0.334

(inc. VAT)

4970 In stock - FREE next working day delivery available

Units	Per unit	Per Reel*
2500 +	£0.278	£695.00

*price indicative

RS Stock No.:: 166-3420
Mfr. Part No.:: FDD7N25LZTM
Brand:: onsemi

Technical Reference

Legislation and Compliance

Product Details

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6.2 A
Maximum Drain Source Voltage	250 V
Series	UniFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	570 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	56 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Length	6.73mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	6.22mm
Typical Gate Charge @ Vgs	12 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	2.39mm