onsemi UniFET N-Channel MOSFET, 16 A, 200 V, 3-Pin DPAK FDD18N20LZ

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£7.92

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£9.50

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10 - 90£0.792£7.92
100 - 240£0.683£6.83
250 +£0.592£5.92

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Packaging Options:
RS Stock No.:
864-8057
Mfr. Part No.:
FDD18N20LZ
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

200 V

Series

UniFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

89 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.73mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

30 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Height

2.39mm

Minimum Operating Temperature

-55 °C

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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