onsemi UniFET N-Channel MOSFET, 15 A, 500 V, 3-Pin D2PAK FDB15N50

Subtotal (1 reel of 800 units)*

£1,212.80

(exc. VAT)

£1,455.20

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 18 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 +£1.516£1,212.80

*price indicative

RS Stock No.:
166-2549
Mfr. Part No.:
FDB15N50
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

500 V

Series

UniFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

11.33mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

33 nC @ 10 V

Length

10.67mm

Transistor Material

Si

Height

4.83mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Related links