N-Channel MOSFET, 33 A, 250 V, 3-Pin D2PAK onsemi FDB33N25TM

RS Stock No.:: 166-2437
Mfr. Part No.:: FDB33N25TM
Brand:: onsemi

N-Channel MOSFET, 33 A, 250 V, 3-Pin D2PAK onsemi FDB33N25TM

This product is currently unavailable to backorder.

Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

Price Each (On a Reel of 800)

£0.856

(exc. VAT)

£1.027

(inc. VAT)

Units	Per unit	Per Reel*
800 +	£0.856	£684.80

*price indicative

RS Stock No.:: 166-2437
Mfr. Part No.:: FDB33N25TM
Brand:: onsemi

Technical Reference

Legislation and Compliance

Product Details

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	33 A
Maximum Drain Source Voltage	250 V
Package Type	D2PAK (TO-263)
Series	UniFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	94 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	235 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	10.67mm
Width	11.33mm
Typical Gate Charge @ Vgs	36.8 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	4.83mm