onsemi N-Channel MOSFET, 16 A, 60 V, 3-Pin DPAK RFD16N06LESM9A

Subtotal (1 reel of 2500 units)*

£1,592.50

(exc. VAT)

£1,910.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.637£1,592.50

*price indicative

RS Stock No.:
166-3194
Mfr. Part No.:
RFD16N06LESM9A
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

47 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Length

6.73mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

51 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Height

2.39mm

Minimum Operating Temperature

-55 °C

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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